JPH0116018B2 - - Google Patents

Info

Publication number
JPH0116018B2
JPH0116018B2 JP54119808A JP11980879A JPH0116018B2 JP H0116018 B2 JPH0116018 B2 JP H0116018B2 JP 54119808 A JP54119808 A JP 54119808A JP 11980879 A JP11980879 A JP 11980879A JP H0116018 B2 JPH0116018 B2 JP H0116018B2
Authority
JP
Japan
Prior art keywords
type well
well region
conductivity type
forming
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54119808A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5643756A (en
Inventor
Toshihiko Mano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP11980879A priority Critical patent/JPS5643756A/ja
Publication of JPS5643756A publication Critical patent/JPS5643756A/ja
Publication of JPH0116018B2 publication Critical patent/JPH0116018B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Local Oxidation Of Silicon (AREA)
JP11980879A 1979-09-18 1979-09-18 Manufacture of semiconductor device Granted JPS5643756A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11980879A JPS5643756A (en) 1979-09-18 1979-09-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11980879A JPS5643756A (en) 1979-09-18 1979-09-18 Manufacture of semiconductor device

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP62146385A Division JPS63147A (ja) 1987-06-12 1987-06-12 半導体装置
JP62146384A Division JPS63146A (ja) 1987-06-12 1987-06-12 半導体装置
JP1341850A Division JPH02224269A (ja) 1989-12-29 1989-12-29 半導体装置
JP1341849A Division JP2572653B2 (ja) 1989-12-29 1989-12-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5643756A JPS5643756A (en) 1981-04-22
JPH0116018B2 true JPH0116018B2 (en]) 1989-03-22

Family

ID=14770733

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11980879A Granted JPS5643756A (en) 1979-09-18 1979-09-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5643756A (en])

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3133468A1 (de) * 1981-08-25 1983-03-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen in siliziumgate-technologie
DE3149185A1 (de) * 1981-12-11 1983-06-23 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung benachbarter mit dotierstoffionen implantierter wannen bei der herstellung von hochintegrierten komplementaeren mos-feldeffekttransistorschaltungen
JPS6031276A (ja) * 1983-07-29 1985-02-18 Toshiba Corp 半導体装置及びその製造方法
JPS6144456A (ja) * 1984-08-09 1986-03-04 Fujitsu Ltd 半導体装置の製造方法
JPS63119250A (ja) * 1987-10-23 1988-05-23 Hitachi Ltd 半導体装置の製法
JPH02337A (ja) * 1988-12-16 1990-01-05 Hitachi Ltd 半導体集積回路装置の製造法
JPH02338A (ja) * 1988-12-16 1990-01-05 Hitachi Ltd 半導体集積回路装置の製造法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5286083A (en) * 1976-01-12 1977-07-16 Hitachi Ltd Production of complimentary isolation gate field effect transistor
US4080718A (en) * 1976-12-14 1978-03-28 Smc Standard Microsystems Corporation Method of modifying electrical characteristics of MOS devices using ion implantation

Also Published As

Publication number Publication date
JPS5643756A (en) 1981-04-22

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